Infineon BSM100GAL120DN2 overview
BSM100GAL120DN2 is a transistor made by Infineon. Infineon Technologies AG BSM100GAL120DN2 Igbt, Collector-Emitter Voltage-Max:1.2 kV, Collector Current-Max (IC):150 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:7, Number of Elements:1
Product details
Manufactured byInfineon
Product typeTransistor
DescriptionInfineon Technologies AG BSM100GAL120DN2 Igbt, Collector-Emitter Voltage-Max:1.2 kV, Collector Current-Max (IC):150 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:7, Number of Elements:1
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