PRIMARION IRF9130EA overview
Infineon Technologies AG IRF9130EA Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Numb...
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DescriptionInfineon Technologies AG IRF9130EA Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:100 V,Number of Elements:1,Drain Current-Max (ID):11 A,Drain-source On Resistance-Max:350 m?
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