PRIMARION IRF044EB overview
Infineon Technologies AG IRF044EB Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Numbe...
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DescriptionInfineon Technologies AG IRF044EB Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:60 V,Number of Elements:1,Drain Current-Max (ID):44 A,Drain-source On Resistance-Max:32 m?
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