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BTS115-E3045

PRIMARION

PRIMARION BTS115-E3045

PRIMARION BTS115-E3045 overview

Infineon Technologies AG BTS115-E3045 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE ...

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DescriptionInfineon Technologies AG BTS115-E3045 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR,Number of Terminals:2,DS Breakdown Voltage-Min:50 V,Number of Elements:1,Drain Current-Max (Abs) (ID):12.5 A,Drain Current-Max (ID):12.5 A,Drain-source On Resistance-Max:125 m?

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