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HYS72V2100GU-10

Infineon ยท DRAM's

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Infineon HYS72V2100GU-10

Infineon HYS72V2100GU-10 overview

Infineon Technologies AG HYS72V2100GU-10 Dram, Memory Density:150.9949 Mbit, Memory Width:72, Organization:2MX72, Supply Voltage-Nom (Vsup):3.3 V, Power Supplie...

Manufactured byInfineon
Part number or familyHYS72V2100GU-10
Product groupDRAM's

Product details

Manufactured byInfineon
Product groupDRAM's
DescriptionInfineon Technologies AG HYS72V2100GU-10 Dram, Memory Density:150.9949 Mbit, Memory Width:72, Organization:2MX72, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:8 ns, Clock Frequency-Max (fCLK):100 MHz, Refresh Cycles:4096, Access Mode:SINGLE BANK PAGE BURST

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Product group DRAM's Explore DRAM's Explore Memory
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