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HYS64V2100GCU-10

Infineon ยท DRAM's

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Infineon HYS64V2100GCU-10

Infineon HYS64V2100GCU-10 overview

Infineon Technologies AG HYS64V2100GCU-10 Dram, Memory Density:134.2177 Mbit, Memory Width:64, Organization:2MX64, Supply Voltage-Nom (Vsup):3.3 V, Power Suppli...

Manufactured byInfineon
Part number or familyHYS64V2100GCU-10
Product groupDRAM's

Product details

Manufactured byInfineon
Product groupDRAM's
DescriptionInfineon Technologies AG HYS64V2100GCU-10 Dram, Memory Density:134.2177 Mbit, Memory Width:64, Organization:2MX64, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:8 ns, Clock Frequency-Max (fCLK):100 MHz, Refresh Cycles:4096

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Product group DRAM's Explore DRAM's Explore Memory
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