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HYB514000-10

Infineon ยท DRAM's

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Infineon HYB514000-10

Infineon HYB514000-10 overview

Infineon Technologies AG HYB514000-10 Dram, Memory Density:4.1943 Mbit, Memory Width:1, Organization:4MX1, Supply Voltage-Nom (Vsup):5 V, Power Supplies:5 V, Ac...

Manufactured byInfineon
Part number or familyHYB514000-10
Product groupDRAM's

Product details

Manufactured byInfineon
Product groupDRAM's
DescriptionInfineon Technologies AG HYB514000-10 Dram, Memory Density:4.1943 Mbit, Memory Width:1, Organization:4MX1, Supply Voltage-Nom (Vsup):5 V, Power Supplies:5 V, Access Time-Max:100 ns, Refresh Cycles:1024

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Manufactured by Infineon View Infineon profile
Product group DRAM's Explore DRAM's Explore Memory
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