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HYB511000-12

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Infineon HYB511000-12

Infineon HYB511000-12 overview

Infineon Technologies AG HYB511000-12 Dram, Memory Density:1.0486 Mbit, Memory Width:1, Organization:1MX1, Supply Voltage-Nom (Vsup):5 V, Power Supplies:5 V, Ac...

Manufactured byInfineon
Part number or familyHYB511000-12
Product groupDRAM's

Product details

Manufactured byInfineon
Product groupDRAM's
DescriptionInfineon Technologies AG HYB511000-12 Dram, Memory Density:1.0486 Mbit, Memory Width:1, Organization:1MX1, Supply Voltage-Nom (Vsup):5 V, Power Supplies:5 V, Access Time-Max:120 ns, Refresh Cycles:512

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Manufactured by Infineon View Infineon profile
Product group DRAM's Explore DRAM's Explore Memory
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