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HYB39S64162T-10

Infineon ยท DRAM's

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Infineon HYB39S64162T-10

Infineon HYB39S64162T-10 overview

Infineon Technologies AG HYB39S64162T-10 Dram, Memory Density:67.1089 Mbit, Memory Width:16, Organization:4MX16, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies...

Manufactured byInfineon
Part number or familyHYB39S64162T-10
Product groupDRAM's

Product details

Manufactured byInfineon
Product groupDRAM's
DescriptionInfineon Technologies AG HYB39S64162T-10 Dram, Memory Density:67.1089 Mbit, Memory Width:16, Organization:4MX16, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:8 ns, Clock Frequency-Max (fCLK):100 MHz, Refresh Cycles:4096, Access Mode:FOUR BANK PAGE BURST

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Manufactured by Infineon View Infineon profile
Product group DRAM's Explore DRAM's Explore Memory
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