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HYB39S512160AT-7

Infineon ยท DRAM's

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Infineon HYB39S512160AT-7

Infineon HYB39S512160AT-7 overview

Infineon Technologies AG HYB39S512160AT-7 Dram, Memory Density:536.8709 Mbit, Memory Width:16, Organization:32MX16, Supply Voltage-Nom (Vsup):3.3 V, Power Suppl...

Manufactured byInfineon
Part number or familyHYB39S512160AT-7
Product groupDRAM's

Product details

Manufactured byInfineon
Product groupDRAM's
DescriptionInfineon Technologies AG HYB39S512160AT-7 Dram, Memory Density:536.8709 Mbit, Memory Width:16, Organization:32MX16, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:5.4 ns, Clock Frequency-Max (fCLK):143 MHz, Refresh Cycles:8192, Access Mode:FOUR BANK PAGE BURST

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Product group DRAM's Explore DRAM's Explore Memory
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