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HYB3165165T-50

Infineon ยท DRAM's

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Infineon HYB3165165T-50

Infineon HYB3165165T-50 overview

Infineon Technologies AG HYB3165165T-50 Dram, Memory Density:67.1089 Mbit, Memory Width:16, Organization:4MX16, Supply Voltage-Nom (Vsup):3.3 V, Access Time-Max...

Manufactured byInfineon
Part number or familyHYB3165165T-50
Product groupDRAM's

Product details

Manufactured byInfineon
Product groupDRAM's
DescriptionInfineon Technologies AG HYB3165165T-50 Dram, Memory Density:67.1089 Mbit, Memory Width:16, Organization:4MX16, Supply Voltage-Nom (Vsup):3.3 V, Access Time-Max:50 ns, Access Mode:FAST PAGE WITH EDO

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Manufactured by Infineon View Infineon profile
Product group DRAM's Explore DRAM's Explore Memory
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