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HYB314400BJ-70

Infineon ยท DRAM's

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Infineon HYB314400BJ-70

Infineon HYB314400BJ-70 overview

Infineon Technologies AG HYB314400BJ-70 Dram, Memory Density:4.1943 Mbit, Memory Width:4, Organization:1MX4, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3...

Manufactured byInfineon
Part number or familyHYB314400BJ-70
Product groupDRAM's

Product details

Manufactured byInfineon
Product groupDRAM's
DescriptionInfineon Technologies AG HYB314400BJ-70 Dram, Memory Density:4.1943 Mbit, Memory Width:4, Organization:1MX4, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:70 ns, Refresh Cycles:1024

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Manufactured by Infineon View Infineon profile
Product group DRAM's Explore DRAM's Explore Memory
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