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HYB25M288180C-653

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Infineon HYB25M288180C-653

Infineon HYB25M288180C-653 overview

Infineon Technologies AG HYB25M288180C-653 Dram, Memory Density:301.9899 Mbit, Memory Width:18, Organization:16MX18, Supply Voltage-Nom (Vsup):2.5 V, Power Supp...

Manufactured byInfineon
Part number or familyHYB25M288180C-653
Product groupDRAM's

Product details

Manufactured byInfineon
Product groupDRAM's
DescriptionInfineon Technologies AG HYB25M288180C-653 Dram, Memory Density:301.9899 Mbit, Memory Width:18, Organization:16MX18, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:1.8/2.5, 2.5 V, Access Time-Max:53 ns, Clock Frequency-Max (fCLK):600 MHz, Access Mode:BLOCK ORIENTED PROTOCOL

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