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HYB25D128160CE-5

Infineon ยท DRAM's

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Infineon HYB25D128160CE-5

Infineon HYB25D128160CE-5 overview

Infineon Technologies AG HYB25D128160CE-5 Dram, Memory Density:134.2177 Mbit, Memory Width:16, Organization:8MX16, Supply Voltage-Nom (Vsup):2.6 V, Power Suppli...

Manufactured byInfineon
Part number or familyHYB25D128160CE-5
Product groupDRAM's

Product details

Manufactured byInfineon
Product groupDRAM's
DescriptionInfineon Technologies AG HYB25D128160CE-5 Dram, Memory Density:134.2177 Mbit, Memory Width:16, Organization:8MX16, Supply Voltage-Nom (Vsup):2.6 V, Power Supplies:2.6 V, Access Time-Max:500 ps, Clock Frequency-Max (fCLK):200 MHz, Refresh Cycles:4096, Access Mode:FOUR BANK PAGE BURST

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Manufactured by Infineon View Infineon profile
Product group DRAM's Explore DRAM's Explore Memory
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