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HYB18T256161AF-25

Infineon ยท DRAM's

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Infineon HYB18T256161AF-25

Infineon HYB18T256161AF-25 overview

Infineon Technologies AG HYB18T256161AF-25 Dram, Memory Density:268.4355 Mbit, Memory Width:16, Organization:16MX16, Supply Voltage-Nom (Vsup):2 V, Access Time-...

Manufactured byInfineon
Part number or familyHYB18T256161AF-25
Product groupDRAM's

Product details

Manufactured byInfineon
Product groupDRAM's
DescriptionInfineon Technologies AG HYB18T256161AF-25 Dram, Memory Density:268.4355 Mbit, Memory Width:16, Organization:16MX16, Supply Voltage-Nom (Vsup):2 V, Access Time-Max:550 ps, Access Mode:FOUR BANK PAGE BURST

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Manufactured by Infineon View Infineon profile
Product group DRAM's Explore DRAM's Explore Memory
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