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HYB18T1G800AF-3

Infineon ยท DRAM's

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Infineon HYB18T1G800AF-3

Infineon HYB18T1G800AF-3 overview

Infineon Technologies AG HYB18T1G800AF-3 Dram, Memory Density:1.0737 Gbit, Memory Width:8, Organization:128MX8, Supply Voltage-Nom (Vsup):1.8 V, Access Time-Max...

Manufactured byInfineon
Part number or familyHYB18T1G800AF-3
Product groupDRAM's

Product details

Manufactured byInfineon
Product groupDRAM's
DescriptionInfineon Technologies AG HYB18T1G800AF-3 Dram, Memory Density:1.0737 Gbit, Memory Width:8, Organization:128MX8, Supply Voltage-Nom (Vsup):1.8 V, Access Time-Max:450 ps, Access Mode:MULTI BANK PAGE BURST

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Manufactured by Infineon View Infineon profile
Product group DRAM's Explore DRAM's Explore Memory
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