Infineon HYB18T1G160AFL-3S overview
HYB18T1G160AFL-3S is a DRAM's made by Infineon. Infineon Technologies AG HYB18T1G160AFL-3S Dram, Memory Density:1.0737 Gbit, Memory Width:16, Organization:64MX16, Supply Voltage-Nom (Vsup):1.8 V, Access Time-Max:450 ps, Access Mode:MULTI BANK PAGE BURST
Product details
Manufactured byInfineon
Product typeDRAM's
DescriptionInfineon Technologies AG HYB18T1G160AFL-3S Dram, Memory Density:1.0737 Gbit, Memory Width:16, Organization:64MX16, Supply Voltage-Nom (Vsup):1.8 V, Access Time-Max:450 ps, Access Mode:MULTI BANK PAGE BURST
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