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HYB18M512160AF-8

Infineon ยท DRAM's

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Infineon HYB18M512160AF-8

Infineon HYB18M512160AF-8 overview

Infineon Technologies AG HYB18M512160AF-8 Dram, Memory Density:536.8709 Mbit, Memory Width:16, Organization:32MX16, Supply Voltage-Nom (Vsup):1.8 V, Power Suppl...

Manufactured byInfineon
Part number or familyHYB18M512160AF-8
Product groupDRAM's

Product details

Manufactured byInfineon
Product groupDRAM's
DescriptionInfineon Technologies AG HYB18M512160AF-8 Dram, Memory Density:536.8709 Mbit, Memory Width:16, Organization:32MX16, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1.8 V, Access Time-Max:7 ns, Clock Frequency-Max (fCLK):100 MHz, Refresh Cycles:8192

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Manufactured by Infineon View Infineon profile
Product group DRAM's Explore DRAM's Explore Memory
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