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Manufactured byHynix
Product groupModules
DescriptionSK Hynix Inc H55S1262EFP-60M Dram, Memory Density:134.2177 Mbit, Memory Width:16, Organization:8MX16, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1.8 V, Access Time-Max:5.4 ns, Clock Frequency-Max (fCLK):166 MHz, Refresh Cycles:4096, Access Mode:FOUR BANK PAGE BURST
DescriptionSK Hynix Inc H55S1262EFP-60M Dram, Memory Density:134.2177 Mbit, Memory Width:16, Organization:8MX16, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1.8 V, Access Time-Max:5.4 ns, Clock Frequency-Max (fCLK):166 MHz, Refresh Cycles:4096, Access Mode:FOUR BANK PAGE BURST
DescriptionHYNIX H55S1262EFP-60M 128Mb(8Mx16bit) Mobile SDR Memory 1.7~1.95V 166MHz FBGA-54
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