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H5TC1G83EFR-PBA

Hynix ยท DRAM's

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Hynix H5TC1G83EFR-PBA

Hynix H5TC1G83EFR-PBA overview

SK Hynix Inc H5TC1G83EFR-PBA Dram, Memory Density:1.0737 Gbit, Memory Width:8, Organization:128MX8, Supply Voltage-Nom (Vsup):1.35 V, Power Supplies:1.35 V, Acc...

Manufactured byHynix
Part number or familyH5TC1G83EFR-PBA
Product groupDRAM's

Product details

Manufactured byHynix
Product groupDRAM's
DescriptionSK Hynix Inc H5TC1G83EFR-PBA Dram, Memory Density:1.0737 Gbit, Memory Width:8, Organization:128MX8, Supply Voltage-Nom (Vsup):1.35 V, Power Supplies:1.35 V, Access Time-Max:225 ps, Clock Frequency-Max (fCLK):800 MHz, Refresh Cycles:8192, Access Mode:MULTI BANK PAGE BURST
DescriptionHYNIX H5TC1G83EFR-PBA Integrated Circuit, HYNIX BGA

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Manufactured by Hynix View Hynix profile
Product group DRAM's Explore DRAM's Explore Integrated Circuits (ICs) Explore Memory
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