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H5PS1G63EFR-E3C

Hynix ยท DRAM's

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Hynix H5PS1G63EFR-E3C

Hynix H5PS1G63EFR-E3C overview

SK Hynix Inc H5PS1G63EFR-E3C Dram, Memory Density:1.0737 Gbit, Memory Width:16, Organization:64MX16, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1.8 V, Acce...

Manufactured byHynix
Part number or familyH5PS1G63EFR-E3C
Product groupDRAM's

Product details

Manufactured byHynix
Product groupDRAM's
DescriptionSK Hynix Inc H5PS1G63EFR-E3C Dram, Memory Density:1.0737 Gbit, Memory Width:16, Organization:64MX16, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1.8 V, Access Time-Max:600 ps, Clock Frequency-Max (fCLK):200 MHz, Refresh Cycles:8192, Access Mode:MULTI BANK PAGE BURST
DescriptionHYNIX H5PS1G63EFR-E3C Integrated Circuit, HYNIX FBGA

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Product group DRAM's Explore DRAM's Explore Integrated Circuits (ICs) Explore Memory
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