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Manufactured byHynix
Product groupModules
DescriptionSK Hynix Inc HMP112S6EFR6C-Y5 Dram, Memory Density:8.5899 Gbit, Memory Width:64, Organization:128MX64, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1.8 V, Access Time-Max:450 ps, Clock Frequency-Max (fCLK):333 MHz, Refresh Cycles:8192, Access Mode:DUAL BANK PAGE BURST
DescriptionHynix HMP112S6EFR6C-Y5 DDR2 Memory, HMP112S6EFR6C-Y5 CGW 1GB 200p PC2-5300 CL5 8c 64x16 DDR2-667 2Rx16 1.8V SODIMM, Hynix
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