HP ATF-21186-STR overview
HP ATF-21186-STR 0.5-6GHz General Purpose Gallium Arsenide FET 2V 10mA SMD4 Hewlett Packard Co ATF-21186-STR Rf Small Signal Field-effect Transistor, Polarity/C...
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Manufactured byHP
Product typeTransistor
DescriptionHP ATF-21186-STR 0.5-6GHz General Purpose Gallium Arsenide FET 2V 10mA SMD4
DescriptionHewlett Packard Co ATF-21186-STR Rf Small Signal Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE, Number of Terminals:4, DS Breakdown Voltage-Min:5 V, Highest Frequency Band:C BAND, Number of Elements:1, Power Gain-Min (Gp):12 dB, Drain Current-Max (ID):200 mA
DescriptionHewlett Packard Co ATF-21186-STR Rf Small Signal Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:4, DS Breakdown Voltage-Min:5 V, Highest Frequency Band:C BAND, Number of Elements:1, Power Gain-Min (Gp):12 dB, Drain Current-Max (ID):200 mΩ
DescriptionHP ATF-21186-STR 0.5-6GHz General Purpose Gallium Arsenide FET 2V 10mA SMD4
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