HP ATF-13736-STR overview
HP ATF-13736-STR 2-16GHz Low Noise Gallium Arsenide FET 2.5V 20mA 50Ω Hewlett Packard Co ATF-13736-STR Rf Small Signal Field-effect Transistor, Polarity/Channe...
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Manufactured byHP
Product typeTransistor
DescriptionHP ATF-13736-STR 2-16GHz Low Noise Gallium Arsenide FET 2.5V 20mA 50Ω
DescriptionHewlett Packard Co ATF-13736-STR Rf Small Signal Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE,Number of Terminals:4,DS Breakdown Voltage-Min:5 V,Highest Frequency Band:KU BAND,Number of Elements:1,Power Gain-Min (Gp):8 dB,Drain Current-Max (ID):90 mA
DescriptionHewlett Packard Co ATF-13736-STR Rf Small Signal Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:4, DS Breakdown Voltage-Min:5 V, Highest Frequency Band:KU BAND, Number of Elements:1, Power Gain-Min (Gp):8 dB, Drain Current-Max (ID):90 mΩ
DescriptionHP ATF-13736-STR 2-16GHz Low Noise Gallium Arsenide FET 2.5V 20mA 50Ω
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