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Manufactured byHitachi
Product groupModules
DescriptionHitachi Ltd 2SJ182(L) Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (Abs) (ID):3 A, Drain Current-Max (ID):3 A, Drain-source On Resistance-Max:550 mΩ
DescriptionHitachi Ltd 2SJ182(L) Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:60 V,Number of Elements:1,Drain Current-Max (Abs) (ID):3 A,Drain Current-Max (ID):3 A,Drain-source On Resistance-Max:550 m?
DescriptionHITACHI 2SJ182L MOSFET, P D-PAK
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| # | Name |
|---|---|
| 1 | 2SJ182(L) |