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Manufactured byHitachi
Product groupModules
DescriptionHITACHI 2SD669A Silicon NPN Epitaxial 180V 1.5A hFE(C):100-200 TO126MOD
DescriptionHitachi Ltd 2SD669A Small Signal Bipolar Transistor, Collector-Emitter Voltage-Max:160 V, Collector Current-Max (IC):1.5 A, Polarity/Channel Type:NPN, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):30, Transition Frequency-Nom (fT):140 MHz
DescriptionHitachi Ltd 2SD669A Small Signal Bipolar Transistor, Collector-Emitter Voltage-Max:160 V,Collector Current-Max (IC):1.5 A,Polarity/Channel Type:NPN,Surface Mount:NO,Configuration:SINGLE,Number of Terminals:3,Number of Elements:1,DC Current Gain-Min (hFE):30,Transition Frequency-Nom (fT):140 MHz
DescriptionHITACHI 2SD669A Silicon NPN Epitaxial 180V 1.5A hFE(C):100-200 TO126MOD
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