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HB52R329E2-B6

Hitachi ยท Modules

Hitachi HB52R329E2-B6

Hitachi HB52R329E2-B6 overview

Hitachi Ltd HB52R329E2-B6 Dram, Memory Density:134.2177 Mbit, Memory Width:4, Organization:32MX4, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access ...

Manufactured byHitachi
Part number or familyHB52R329E2-B6
Product groupModules

Product details

Manufactured byHitachi
Product groupModules
DescriptionHitachi Ltd HB52R329E2-B6 Dram, Memory Density:134.2177 Mbit, Memory Width:4, Organization:32MX4, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:7.5 ns, Clock Frequency-Max (fCLK):100 MHz, Refresh Cycles:4096, Access Mode:DUAL BANK PAGE BURST
DescriptionHitachi Ltd HB52R329E2-B6 Dram, Memory Density:134.2177 Mbit, Memory Width:4, Organization:32MX4, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:7.5 ns, Clock Frequency-Max (fCLK):100 MHz, Refresh Cycles:4096, Access Mode:DUAL BANK PAGE BURST
DescriptionHITACHI HB52R329E2-B6 PC-100 256MB MEMORY

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