Product details
Manufactured byHitachi
Product groupModules
DescriptionHitachi Ltd HB52R329E2-B6 Dram, Memory Density:134.2177 Mbit, Memory Width:4, Organization:32MX4, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:7.5 ns, Clock Frequency-Max (fCLK):100 MHz, Refresh Cycles:4096, Access Mode:DUAL BANK PAGE BURST
DescriptionHitachi Ltd HB52R329E2-B6 Dram, Memory Density:134.2177 Mbit, Memory Width:4, Organization:32MX4, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:7.5 ns, Clock Frequency-Max (fCLK):100 MHz, Refresh Cycles:4096, Access Mode:DUAL BANK PAGE BURST
DescriptionHITACHI HB52R329E2-B6 PC-100 256MB MEMORY
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