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Manufactured byHitachi
Product groupModules
DescriptionHitachi Ltd HAT1031T Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:20 V, Number of Elements:2, Drain Current-Max (Abs) (ID):2.5 A, Drain Current-Max (ID):2.5 A, Drain-source On Resistance-Max:280 mΩ
DescriptionHitachi Ltd HAT1031T Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL,Surface Mount:YES,Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE,Number of Terminals:8,DS Breakdown Voltage-Min:20 V,Number of Elements:2,Drain Current-Max (Abs) (ID):2.5 A,Drain Current-Max (ID):2.5 A,Drain-source On Resistance-Max:280 m?
DescriptionHITACHI HAT1031T Integrated Circuit, Silicon P Channel Power Mos Fet High Speed Power Switching
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