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HAT1029R

HITACHI HAT1029R Integrated Circuit, Silicon P Channel Power Mos Fet...

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HITACHI HAT1029R Integrated Circuit, Silicon P Channel Power Mos Fet...

Hitachi HAT1029R overview

Hitachi Ltd HAT1029R Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:20 V, Number of Elements:2, Drain Current-Max (Abs) (ID):3.5 A, Drain Current-Max (ID):3.5 A...

Manufactured byHitachi
Part number or familyHAT1029R
Product groupModules

What is Hitachi HAT1029R?

HITACHI HAT1029R Integrated Circuit, Silicon P Channel Power Mos Fet.... Hitachi Ltd HAT1029R Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:20 V, Number of Elements:2, Drain Current-Max (Abs) (ID):3.5 A, Drain Current-Max (ID):3.5 A...

Product details

Manufactured byHitachi
Product groupModules
DescriptionHitachi Ltd HAT1029R Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:20 V, Number of Elements:2, Drain Current-Max (Abs) (ID):3.5 A, Drain Current-Max (ID):3.5 A, Drain-source On Resistance-Max:230 mΩ
Description 1786369631Hitachi Ltd HAT1029R Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL,Surface Mount:YES,Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE,Number of Terminals:8,DS Breakdown Voltage-Min:20 V,Number of Elements:2,Drain Current-Max (Abs) (ID):3.5 A,Drain Current-Max (ID):3.5 A,Drain-source On Resistance-Max:230 m?
Description 1784000516HITACHI HAT1029R Integrated Circuit, Silicon P Channel Power Mos Fet High Speed Power Switching

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Product group Modules Explore Modules Explore Transistors Explore Integrated Circuit
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