Hitachi HAT1021R overview
Hitachi Ltd HAT1021R Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:20 V, Number of Elements:1, Drain Current-Max (Abs) (ID):5.5 A, Drain Current-Max (ID):5.5 A, Drain-source...
What is Hitachi HAT1021R?
HITACHI HAT1021R Integrated Circuit, Silicon P Channel Power MOS FET.... Hitachi Ltd HAT1021R Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:20 V, Number of Elements:1, Drain Current-Max (Abs) (ID):5.5 A, Drain Current-Max (ID):5.5 A, Drain-source...
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