Name: HITACHI HAF2011L Integrated Circuit, Silicon N Channel MOS FET Serie...
Brand: Hitachi
SKU: HAF2011L

Hitachi HAF2011L overview

Hitachi Ltd HAF2011(L) Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:Single, Number of Terminals:3, Drain Current-Max (Abs) (ID):40 A, Drain-source On Resistance-Max:33 mΩ Hitachi Ltd HAF2011(L) Power Field-effect Transistor, Polarity/Channel Type:N...

Manufactured byHitachi

Part number or familyHAF2011L

Product groupModules

What is Hitachi HAF2011L?

HITACHI HAF2011L Integrated Circuit, Silicon N Channel MOS FET Serie.... Hitachi Ltd HAF2011(L) Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:Single, Number of Terminals:3, Drain Current-Max (Abs) (ID):40 A, Drain-source On Resistance-Max:33 mΩ Hitachi Ltd HAF2011(L) Power Field-effect Transistor, Polarity/Channel Type:N...

Product details

Manufactured byHitachi

Product groupModules

DescriptionHitachi Ltd HAF2011(L) Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:Single, Number of Terminals:3, Drain Current-Max (Abs) (ID):40 A, Drain-source On Resistance-Max:33 mΩ

Description 1786764005Hitachi Ltd HAF2011(L) Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:Single,Number of Terminals:3,Drain Current-Max (Abs) (ID):40 A,Drain-source On Resistance-Max:33 m?

Description 1783960419HITACHI HAF2011L Integrated Circuit, Silicon N Channel MOS FET Series Power Switching

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Name variations

#	Name
1	HAF2011(L)