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Manufactured byHitachi
Product groupModules
DescriptionHitachi Ltd HAF2011(L) Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:Single, Number of Terminals:3, Drain Current-Max (Abs) (ID):40 A, Drain-source On Resistance-Max:33 mΩ
DescriptionHitachi Ltd HAF2011(L) Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:Single,Number of Terminals:3,Drain Current-Max (Abs) (ID):40 A,Drain-source On Resistance-Max:33 m?
DescriptionHITACHI HAF2011L Integrated Circuit, Silicon N Channel MOS FET Series Power Switching
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| # | Name |
|---|---|
| 1 | HAF2011(L) |