Hitachi MBN1200E25E overview
Hitachi Ltd MBN1200E25E Igbt, Collector-Emitter Voltage-Max:2.5 kV, Collector Current-Max (IC):1.2 kA, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Config...
Product details
Manufactured byHitachi
Product typeDiscrete Semiconductor Product
DescriptionHitachi Ltd MBN1200E25E Igbt, Collector-Emitter Voltage-Max:2.5 kV, Collector Current-Max (IC):1.2 kA, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:COMMON EMITTER, 3 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:9, Number of Elements:3
DescriptionIGBT Modules
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Hitachi
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Product type
Discrete Semiconductor Product
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