Hitachi MBN1200E17D overview
MBN1200E17D by Hitachi is listed under Discrete Semiconductor Products. Hitachi Ltd MBN1200E17D Igbt, Collector-Emitter Voltage-Max:1.7 kV, Collector Current-Max (IC):1.2 kA, Number of Elements:1 IGBT Modules
Product details
Manufactured byHitachi
Product typeDiscrete Semiconductor Product
DescriptionHitachi Ltd MBN1200E17D Igbt, Collector-Emitter Voltage-Max:1.7 kV, Collector Current-Max (IC):1.2 kA, Number of Elements:1
DescriptionIGBT Modules
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Manufactured by
Hitachi
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Product type
Discrete Semiconductor Product
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