Hitachi MBN1200D33A overview
Hitachi Ltd MBN1200D33A Igbt, Collector-Emitter Voltage-Max:3.3 kV, Collector Current-Max (IC):1.2 kA, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Config...
Product details
Manufactured byHitachi
Product typeDiscrete Semiconductor Product
DescriptionHitachi Ltd MBN1200D33A Igbt, Collector-Emitter Voltage-Max:3.3 kV, Collector Current-Max (IC):1.2 kA, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:COMPLEX, Number of Terminals:9, Number of Elements:3
DescriptionMODULE
DescriptionIGBT Modules
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Hitachi
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Product type
Discrete Semiconductor Product
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