Hitachi MBN1000E33E2 overview
Hitachi Ltd MBN1000E33E2 Igbt, Collector-Emitter Voltage-Max:3.3 kV, Collector Current-Max (IC):1 kA, Number of Elements:1 IGBT Modules
Manufactured byHitachi
Part number or familyMBN1000E33E2
Product groupDiscrete Semiconductor Products
Product details
Manufactured byHitachi
Product groupDiscrete Semiconductor Products
DescriptionHitachi Ltd MBN1000E33E2 Igbt, Collector-Emitter Voltage-Max:3.3 kV, Collector Current-Max (IC):1 kA, Number of Elements:1
DescriptionIGBT Modules
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Hitachi
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Product group
Discrete Semiconductor Products
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