Hitachi MBM200GS12A overview
MBM200GS12A by Hitachi is listed under Discrete Semiconductor Products. Hitachi Ltd MBM200GS12A Igbt, Collector-Emitter Voltage-Max:1.2 kV, Collector Current-Max (IC):200 A, Polarity/Channel Type:N-CHANNEL, Configuration:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Elements:2 IGBT Modules
Product details
Manufactured byHitachi
Product typeDiscrete Semiconductor Product
DescriptionHitachi Ltd MBM200GS12A Igbt, Collector-Emitter Voltage-Max:1.2 kV, Collector Current-Max (IC):200 A, Polarity/Channel Type:N-CHANNEL, Configuration:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Elements:2
DescriptionIGBT Modules
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Hitachi
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Product type
Discrete Semiconductor Product
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