Hitachi MBB75AS6 overview
Hitachi Ltd MBB75AS6 Igbt, Collector-Emitter Voltage-Max:600 V, Collector Current-Max (IC):75 A, Polarity/Channel Type:N-CHANNEL, Configuration:BRIDGE, 6 ELEMEN...
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Manufactured byHitachi
Product groupDiscrete Semiconductor Products
DescriptionHitachi Ltd MBB75AS6 Igbt, Collector-Emitter Voltage-Max:600 V, Collector Current-Max (IC):75 A, Polarity/Channel Type:N-CHANNEL, Configuration:BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, Number of Elements:6
DescriptionIGBT Modules
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Hitachi
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Discrete Semiconductor Products
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