Product details
Manufactured byHitachi
Product groupModules
DescriptionHitachi Ltd BB501C Rf Small Signal Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:4, DS Breakdown Voltage-Min:6 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:1, Drain Current-Max (Abs) (ID):20 mA, Power Gain-Min (Gp):17 dB, Drain Current-Max (ID):20 mA
DescriptionHitachi Ltd BB501C Rf Small Signal Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:4, DS Breakdown Voltage-Min:6 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:1, Drain Current-Max (Abs) (ID):20 mΩ, Power Gain-Min (Gp):17 dB, Drain Current-Max (ID):20 mΩ
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Hitachi
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Modules
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