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Manufactured byHitachi
Product groupModules
DescriptionHitachi Ltd 2SJ76 Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:140 V, Number of Elements:1, Drain Current-Max (Abs) (ID):500 mA, Drain Current-Max (ID):500 mA
DescriptionHitachi Ltd 2SJ76 Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:140 V,Number of Elements:1,Drain Current-Max (Abs) (ID):500 mA,Drain Current-Max (ID):500 mA
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