Product details
Manufactured byHitachi
Product groupModules
DescriptionHitachi Ltd 2SD2113 Power Bipolar Transistor, Collector-Emitter Voltage-Max:120 V, Collector Current-Max (IC):3 A, Polarity/Channel Type:NPN, Surface Mount:NO, Configuration:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):1000
DescriptionHitachi Ltd 2SD2113 Power Bipolar Transistor, Collector-Emitter Voltage-Max:120 V, Collector Current-Max (IC):3 A, Polarity/Channel Type:NPN, Surface mount:NO, Configuration:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):1000
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