Hitachi 2SD1135B overview
2SD1135B is a transistor made by Hitachi. Hitachi Ltd 2SD1135B Power Bipolar Transistor, Collector-Emitter Voltage-Max:80 V, Collector Current-Max (IC):4 A, Polarity/Channel Type:NPN, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):60, Transition…
Product details
Manufactured byHitachi
Product typeTransistor
DescriptionHitachi Ltd 2SD1135B Power Bipolar Transistor, Collector-Emitter Voltage-Max:80 V, Collector Current-Max (IC):4 A, Polarity/Channel Type:NPN, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):60, Transition Frequency-Nom (fT):10 MHz
DescriptionHitachi Ltd 2SD1135B Power Bipolar Transistor, Collector-Emitter Voltage-Max:80 V, Collector Current-Max (IC):4 A, Polarity/Channel Type:NPN, Surface mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):60, Transition Frequency-Nom (fT):10 mΩz
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