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Manufactured byHitachi
Product groupModules
DescriptionHitachi Ltd HVM189S Pin Diode, Diode Capacitance-Max:1.8 pF, Power Dissipation-Max:100 mW, Diode Forward Resistance-Max:5.5 Ω, Diode Element Material:SILICON, Breakdown Voltage-Min:60 V, Diode Type:PIN DIODE, Configuration:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS, Surface Mount:YES, Number of Elements:2, Technology:POSITIVE-INTRINSIC-NEGATIVE
DescriptionHitachi Ltd HVM189S Pin Diode, Diode Capacitance-Max:1.8 pF, Power Dissipation-Max:100 mW, Diode Forward Resistance-Max:5.5 Ω, Diode Element Material:SILICON, Breakdown Voltage-Min:60 V, Diode Type:PIN DIODE, Configuration:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS, Surface Mount:YES, Number of Elements:2, Technology:POSITIVE-INTRINSIC-NEGATIVE
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