Hitachi MBN1200C33 overview
MBN1200C33 is a transistor made by Hitachi. Hitachi Ltd MBN1200C33 Igbt, Collector-Emitter Voltage-Max:3.3 kV, Collector Current-Max (IC):1.2 kA, Polarity/Channel Type:N-CHANNEL, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Elements:1
Product details
Manufactured byHitachi
Product typeTransistor
DescriptionHitachi Ltd MBN1200C33 Igbt, Collector-Emitter Voltage-Max:3.3 kV, Collector Current-Max (IC):1.2 kA, Polarity/Channel Type:N-CHANNEL, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Elements:1
DescriptionHitachi Ltd MBN1200C33 IGBT, Collector-Emitter Voltage-Max:3.3 kV, Collector Current-Max (IC):1.2 kA, Polarity/Channel Type:N-CHANNEL, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Elements:1
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