Product details
Manufactured byHitachi
Product groupModules
DescriptionHitachi Ltd HB52RD168GB-A6F Dram, Memory Density:1.0737 Gbit, Memory Width:64, Organization:16MX64, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:6 ns, Clock Frequency-Max (fCLK):100 MHz, Refresh Cycles:4096, Access Mode:SINGLE BANK PAGE BURST
DescriptionHitachi Ltd HB52RD168GB-A6F Dram, Memory Density:1.0737 Gbit, Memory Width:64, Organization:16MX64, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:6 ns, Clock Frequency-Max (fCLK):100 MHz, Refresh Cycles:4096, Access Mode:SINGLE BANK PAGE BURST
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