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HB52E649E1-A6A

Hitachi ยท Modules

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Hitachi HB52E649E1-A6A

Hitachi HB52E649E1-A6A overview

Hitachi Ltd HB52E649E1-A6A Dram, Memory Density:268.4355 Mbit, Memory Width:4, Organization:64MX4, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access...

Manufactured byHitachi
Part number or familyHB52E649E1-A6A
Product groupModules

Product details

Manufactured byHitachi
Product groupModules
DescriptionHitachi Ltd HB52E649E1-A6A Dram, Memory Density:268.4355 Mbit, Memory Width:4, Organization:64MX4, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:6.9 ns, Clock Frequency-Max (fCLK):100 MHz, Refresh Cycles:8192, Access Mode:SINGLE BANK PAGE BURST
DescriptionHitachi Ltd HB52E649E1-A6A Dram, Memory Density:268.4355 Mbit, Memory Width:4, Organization:64MX4, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:6.9 ns, Clock Frequency-Max (fCLK):100 MHz, Refresh Cycles:8192, Access Mode:SINGLE BANK PAGE BURST

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Product group Modules Explore Modules Explore DRAM's Explore Memory
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