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HB52E169E12-B6D

Hitachi ยท Modules

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Hitachi HB52E169E12-B6D

Hitachi HB52E169E12-B6D overview

Hitachi Ltd HB52E169E12-B6D Dram, Memory Density:67.1089 Mbit, Memory Width:4, Organization:16MX4, Supply Voltage-Nom (Vsup):3.3 V, Access Time-Max:6.9 ns, Acce...

Manufactured byHitachi
Part number or familyHB52E169E12-B6D
Product groupModules

Product details

Manufactured byHitachi
Product groupModules
DescriptionHitachi Ltd HB52E169E12-B6D Dram, Memory Density:67.1089 Mbit, Memory Width:4, Organization:16MX4, Supply Voltage-Nom (Vsup):3.3 V, Access Time-Max:6.9 ns, Access Mode:SINGLE BANK PAGE BURST
DescriptionHitachi Ltd HB52E169E12-B6D Dram, Memory Density:67.1089 Mbit, Memory Width:4, Organization:16MX4, Supply Voltage-Nom (Vsup):3.3 V, Access Time-Max:6.9 ns, Access Mode:SINGLE BANK PAGE BURST

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Manufactured by Hitachi View Hitachi profile
Product group Modules Explore Modules Explore DRAM's Explore Memory
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