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HB52E168EN-B6

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Hitachi HB52E168EN-B6

Hitachi HB52E168EN-B6 overview

Hitachi Ltd HB52E168EN-B6 Dram, Memory Density:1.0737 Gbit, Memory Width:64, Organization:16MX64, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access ...

Manufactured byHitachi
Part number or familyHB52E168EN-B6
Product groupModules

Product details

Manufactured byHitachi
Product groupModules
DescriptionHitachi Ltd HB52E168EN-B6 Dram, Memory Density:1.0737 Gbit, Memory Width:64, Organization:16MX64, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:6 ns, Clock Frequency-Max (fCLK):100 MHz, Refresh Cycles:4096, Access Mode:DUAL BANK PAGE BURST
DescriptionHitachi Ltd HB52E168EN-B6 Dram, Memory Density:1.0737 Gbit, Memory Width:64, Organization:16MX64, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:6 ns, Clock Frequency-Max (fCLK):100 MHz, Refresh Cycles:4096, Access Mode:DUAL BANK PAGE BURST

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