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HB52C169EN-10

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Hitachi HB52C169EN-10

Hitachi HB52C169EN-10 overview

Hitachi Ltd HB52C169EN-10 Dram, Memory Density:1.208 Gbit, Memory Width:72, Organization:16MX72, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access T...

Manufactured byHitachi
Part number or familyHB52C169EN-10
Product groupModules

Product details

Manufactured byHitachi
Product groupModules
DescriptionHitachi Ltd HB52C169EN-10 Dram, Memory Density:1.208 Gbit, Memory Width:72, Organization:16MX72, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:9 ns, Clock Frequency-Max (fCLK):66 MHz, Refresh Cycles:4096, Access Mode:DUAL BANK PAGE BURST
DescriptionHitachi Ltd HB52C169EN-10 Dram, Memory Density:1.208 Gbit, Memory Width:72, Organization:16MX72, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:9 ns, Clock Frequency-Max (fCLK):66 MHz, Refresh Cycles:4096, Access Mode:DUAL BANK PAGE BURST

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