Hitachi HB526R872ESN-10H overview
Hitachi Ltd HB526R872ESN-10H Dram, Memory Density:603.9798 Mbit, Memory Width:72, Organization:8MX72, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Acc...
Product details
Manufactured byHitachi
Product typeDRAM's
DescriptionHitachi Ltd HB526R872ESN-10H Dram, Memory Density:603.9798 Mbit, Memory Width:72, Organization:8MX72, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:8 ns, Clock Frequency-Max (fCLK):100 MHz, Refresh Cycles:4096, Access Mode:DUAL BANK PAGE BURST
DescriptionHitachi Ltd HB526R872ESN-10H Dram, Memory Density:603.9798 Mbit, Memory Width:72, Organization:8MX72, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:8 ns, Clock Frequency-Max (fCLK):100 MHz, Refresh Cycles:4096, Access Mode:DUAL BANK PAGE BURST
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