Harris Semiconductor RFT1P06E overview
Harris Semiconductor RFT1P06E Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number o...
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Manufactured byHarris Semiconductor
Product groupModules
DescriptionHarris Semiconductor RFT1P06E Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:4,DS Breakdown Voltage-Min:60 V,Number of Elements:1,Drain Current-Max (Abs) (ID):1.4 A,Drain Current-Max (ID):1.4 A,Drain-source On Resistance-Max:285 m?
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Harris Semiconductor
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Modules
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